30A02MH-TL-E 数据手册
其他文档
30A02MH 6 pages
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: onsemi 30A02MH-TL-E
- Transistor Type: PNP
- Collector Current (Ic): 700mA
- Power Dissipation (Pd): 600mW
- Transition Frequency (fT): 520MHz
- DC Current Gain (hFE@Ic,Vce): 200@10mA,2V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 30V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 220mV@10mA,200mA
- Package: MCPH-3
- Manufacturer: onsemi
- Series: -
- Packaging: Tape & Reel (TR)
- Part Status: Active
- Current - Collector (Ic) (Max): 700mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 220mV @ 10mA, 200mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 10mA, 2V
- Power - Max: 600mW
- Frequency - Transition: 520MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 3-SMD, Flat Lead
- Supplier Device Package: 3-MCPH
- Base Part Number: 30A02
- detail: Bipolar (BJT) Transistor PNP 30V 700mA 520MHz 600mW Surface Mount 3-MCPH